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eml6 / uml6n transistors rev.c 1/4 general purpose transistor (isolated transistor and diode) eml6 / uml6n 2sc5585 and rb521s-30 are housed independ ently in a emt5 or umt5 package. z applications dc / dc converter motor driver z features 1) tr : low v ce(sat) di : low v f 2) small package z structure silicon epitaxial planar transistor schottky barrier diode the following characteristics apply to both di1 and tr2. z equivalent circuit (eml6 / uml6n) tr2 di1 (1) (2) (3) (4) (5) z packaging specifications type eml6 emt5 l6 t2r 8000 uml6n umt5 l6 tr 3000 package marking code basic ordering unit (pieces) z dimensions (unit : mm) each lead has same dimensionseach lead has same dimensions rohm : emt5 umt5 emt5 abbreviated symbol : l6abbreviated symbol : l6 rohm : umt5eiaj : sc-88a 0.9 0.15 0.1min. 0.7 2.1 1.3 0.65 2.0 0.2 1.25 0.65 ( 4 ) ( 1 ) ( 5 ) ( 2 ) ( 3 ) 1pin mark 0.22 1.2 1.6 ( 1 ) ( 2 ) ( 3 ) ( 5 ) ( 4 ) 0.13 0.5 0.5 0.5 1.0 1.6 1pin mark downloaded from: http:///
eml6 / uml6n transistors rev.c 2/4 z absolute maximum ratings (ta=25 c) di1 parameter symbol i o i fsm v r tj limits 200 1 30 125 unit ma av c average revtified forward currentforward current surge peak (60hz, 1 ) reverse voltage (dc)junction temperature tr2 parameter symbol v cbo v ceo v ebo i c i cp p d tj limits 1512 6 500120 150 1 ? 1 unit vv v ma a mw c ? 1 each terminal mounted on a recommended. collector-base voltagecollector-emitter voltage emitter-base voltage collector current power dissipation junction temperature di1 / tr2 parameter symbol p d tstg limits 150 55 to +125 ? unit mw c ? each terminal mounted on a recommended. power dissipationstorage temperature z electrical characteristics (ta=25 c) di1 parameter symbol min. typ. max. unit conditions v f 0.40 0.50 v i f = 200ma forward voltagereverse current i r 4.0 30 av r = 10v tr2 parameter symbol min. typ. max. unit conditions v cb = 10v, i e = 0ma, f = 1mhz transition frequency f t 320 mhz v ce = 2v, i e = 10ma, f = 100mhz bv ceo 12 v i c = 1ma collector-emitter breakdown voltage bv cbo 15 v i c = 10 a collector-base breakdown voltage bv ebo 6 v i e = 10 a emitter-base breakdown voltage i cbo 100 na v cb = 15v collector cut-off current i ebo 100 na v eb = 6v emitter cut-off current v ce(sat) 90 250 mv i c = 200ma, i b = 10ma collector-emitter saturation voltage h fe 270 680 v ce = 2v, i c = 10ma dc current gain cob 7.5 pf collector output capacitance downloaded from: http:///
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5b? 5b? 5b? 5b? z electrical characteristic curves di1 tr2 fig.3 grounded emitter propagation characteristics 0 1 100 1000 10 base to emitter voltage : v be (v) collector current : i c (ma) 1.4 1.0 1.2 0.4 0.6 0.8 0.2 v ce =2v pulsed ta=125 c ta=25 c ta= 40 c 1 10 100 1000 collector current : i c (ma) fig.4 dc current gain vs. collector current 1 dc current gain : h fe 10 1000 100 ta = 125 c ta = 40 c ta = 25 c v ce = 2v pulsed fig.5 collector-emitter saturation voltage vs. collector current ( ) 1 10 100 1000 collector current : i c (ma) 1 collector saturation voltage : v ce(sat) (mv) 10 1000 100 ta=25 c pulsed i c /i b = 50 i c /i b = 20 i c /i b = 10 fig.6 collector-emitter saturation voltage vs. collector current ( ? ) 1 10 100 1000 collector current : i c (ma) 1 collector saturation voltage : v ce (sat) (mv) 10 1000 100 ta= 1 25 c 25 c 40 c i c /i b = 20 pulsed 1 10 100 1000 collector current : i c (ma) fig.7 base-emitter saturation voltage vs. collector current 10 baser saturation voltage : v be (sat) (mv) 100 10000 1000 ta = 25 c ta = 40 c ta = 125 c i c /i b = 20 pulsed fig.8 gain bandwidth product vs. emitter current 1 10 100 1000 emitter current : i e (ma) 1 transition frequency : f t (mhz) 10 1000 100 v ce = 2v ta = 25 c pulsed 5b? 5b? 5b? 5b? 3&7&34&$633&/5*3 v"
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eml6 / uml6n transistors rev.c 3/4 fig.9 collector output capacitance vs. collector-base voltage emitter input capacitance vs. emitter-base voltage 1 10 100 0.1 1 10 100 1000 ta = 25 c f = 1mhz i e = 0a collector output capacitance : cob (pf) emitter input capacitance : cib (pf) emitter to base voltage : v eb ( v) cib cob 0.01 0.1 1 10 100 emitter current : v ce (v) fig.10 safe operation area 0.001 transition frequency : i c (a) 0.01 10 0.1 1 ta = 25 c single pulsed dc 100ms 10ms 1ms downloaded from: http:///
notes no technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of rohm co.,ltd. the contents described herein are subject to change without notice. the specifications for the product described in this document are for reference only. upon actual use, therefore, please request that specifications to be separately delivered. application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. rohm co.,ltd. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by rohm co., ltd. is granted to any such buyer. products listed in this document are no antiradiation design. appendix1-rev2.0 thank you for your accessing to rohm product informations. more detail product informations and catalogs are available, please contact your nearest sales office. rohm customer support system the americas / europe / asia / japan contact us : webmaster@ rohm.co. jp www.rohm.com copyright ? 2008 rohm co.,ltd. the products listed in this document are designed to be used with ordinary electronic equipment or de vices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of which would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. it is our top priority to supply products with the utmost quality and reliability. however, there is always a chance of failure due to unexpected factors. therefore, please take into account the derating characteristics and allow for sufficient safety features, such as extra margin, anti-flammability, and fail-safe measures when designing in order to prevent possible accidents that may result in bodily harm or fire caused by component failure. rohm cannot be held responsible for any damages arising from the use of the products under conditions out of the range of the specifications or due to non-compliance with the notes specified in this catalog. 21 saiin mizosaki- cho, ukyo-ku, kyoto 615-8585, japan tel : +81-75-311-2121 fax : +81-75-315-0172 appendix downloaded from: http:///

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